TK4P60DB mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS .
* Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ.) (2) High forw.
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